Intel, Micron co
According to foreign media reports, Intel and Micron Technology have announced a high-speed NAND flash technology, NAND flash memory speed is the current 5 times. The high-speed NAND flash memory technology
by Intel and Micron co-developed with the technology to meet the latest interface specification, which defines the so-called NAND flash memory interface to open (ONFi) Working Group developed ONFi2.0 standard, which defines a high-speed NAND Flash interface speed of 133MB / s. The previous number of NAND flash memory transfer rate of a maximum of 50MB / s. No wonder that when applied to solid-state hard drive when the number of such transmission rate will undoubtedly contain procedures for operating speed.
Signaling through the double rate (double-data-ratesignaling) and source synchronous clock (sourcesynchronousclocks) the use of standards-based ONFi2.0 related equipment to speed up the data read speed reduces data buffering time. Micron NAND flash sector
Marketing Manager KevinKilbuck said that the technology to solve the NAND flash interface transfer rate of the bottleneck. It is reported that Micron and Intel have collaborated on a NAND flash memory joint venture (IMFlashTechnologiesLLC), both sides said the new company will mainly Micron NAND technology development experience and high efficient production facilities, as well as Intel's multi-level cell (MLC) technology to develop NAND flash memory business.
The cooperation of Intel and Micron high-speed NAND Flash interface technology is based on SLC technology, although the line ONFi2.0 standards, but thanks to a more advanced four-plane architecture, its interface to read up to 200MB / s, The write speed of up to 100MB / s. Very suitable for the development of new cache assisted acceleration, solid-state hard drives, to take the development of embedded and portable program can also make better use of PCI-E2.0, USB3.0 high-bandwidth bus advantage. Flash memory interface, compared to the traditional read and write speeds are 40MB / s and 20MB / s, the gap is large raspberry.
High-speed transmission features faster processing of data, video, pictures and other application processing speed. In addition, to improve the use of flash memory as a storage medium, such as some of the computers, digital cameras, MP3 and mobile phone data transfer speed.
Intel NAND Products Group director of marketing PeteHazenPeteHazen IA platform, "said the computing market is NAND-based solutions to meet the arrival, through the use of caching and solid-state drives to improve system performance. In addition to the performance of traditional NAND 5 times, the The jointly developed by Intel and Micron, based ONFi2.0 industry standards to achieve high-speed NAND technology will be used, such as USB3.0, including PCIe and upcoming standards such as high-performance system interfaces, including new embedded and mobile solution program. "
Example, when used in hybrid hard drive, compared with traditional hard drives, high speed NAND can allow the system to any location or 4 times to 2 times the speed of read and write data.
High ground to seize the market, Micron has started trial production of this new technology 8GB flash memory chip samples, using a 50 nanometer process. This 8GB single-level cell (SLC) high speed NAND flash memory will be available to OEM manufacturers are expected to be able to put into mass production later this year. Estimates can be opened next year, based on standard flash memory products ONFI2.0 the mystery, which includes a multi-level cell (MLC) NAND flash memory products fast.
Science on endlessly, ONFi members include Hynix Semiconductor, Intel, Micron, Sony Corporation and STMicroelectronics, will continue to develop more high-speed flash memory technology, trying to speed up to 400MB / s. By 2009, the new standard will be bred out ONFi.
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